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AON6405L P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.
Features
VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7m (VGS = -10V) RDS(ON) < 8m (VGS = -4.5V) ESD Protected! 100% UIS Tested!
-RoHS Compliant -Halogen Free
Top View Fits SOIC8 footprint !
S S S G D D D D G
Rg
D
DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current Avalanche Current
C C
S
Maximum -30 20 -30 -23 -160 -15 -12 -54 146 83 33 2.5 1.6 -55 to 150
Units V V A
TC=25C TC=100C TA=25C TA=70C
C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
Repetitive avalanche energy L=0.1mH Power Dissipation
B
TC=25C TC=100C TA=25C TA=70C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient AD Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 14.2 42 1.2
Max 17 50 1.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS= 16V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -0.8 -160 5.5 7 6.1 70 -0.65 -1 -50 4580 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 755 564 160 87 VGS=-10V, VDS=-15V, ID=-20A 41 12.8 17 180 VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 IF=-20A, dI/dt=300A/s 260 1.2 9.7 32 77 40 210 105 5500 7 8.5 8 -1.2 Min -30 -1 -5 10 -1.6 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns s s ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(-10V) Total Gate Charge Qg(-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial T J =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. Rev 0: July 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160 140 120 100 -ID (A) 80 60 40 20 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics (Note E) 8 7 RDS(ON) (m) 6 5 VGS=-10V 4 3 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 20 ID=-20A 16 RDS(ON) (m) 12 125C 8 4 25C 0 2 4 6 8 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) -IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 VGS=-4.5V Normalized On-Resistance 1.8 ID=-20A 1.6 VGS=-10V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=-2.5V -5V -3V -ID(A) -10V -4V -3.5V 80 60 40 125C 20 25C 0 0 1 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) 100 VDS=-5V
VGS=-4.5V
1.0E+02 1.0E+01 1.0E+00 125C 25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=-15V ID=-20A Capacitance (pF) 7000 6000 Ciss 5000 4000 3000 2000 Coss 1000 Crss 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics
8
-VGS (Volts)
6
4
2
1000.0
200 160
Power (W)
100.0 -ID (Amps) RDS(ON) limited 10s 10ms 1.0 DC
10s 100s 1ms
TJ(Max)=150C TC=25C
10.0
120 80 40 0
0.1
TJ(Max)=150C TC=25C 0.1 1 -VDS (Volts) 10 100
0.0 0.01
0.0001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
10 ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & Waveforms
RL Vds Vgs Vgs Rg DUT
VDC
Vgs Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds -
Isd Vgs
L
VDC
+ Vdd -Vds
Ig
Alpha & Omega Semiconductor, Ltd.
+
-
+
-
+
Charge
t on td(on) tr t d(off) t off tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
E AR= 1/2 LIAR
2
Vds BVDSS Vdd Id I AR
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
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